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Common Source Push-Pull Pair
ARF450
ARF450
BeO 11405
RF POWER MOSFET
Specified 150 Volt, 81.36 MHz Characteristics: Output Power = 500 Watts. Gain = 13dB (Class C) Efficiency = 75%
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C
N - CHANNEL ENHANCEMENT MODE
150V
500W
120MHz
The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
High Performance Push-Pull RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability.
All Ratings: TC = 25C unless otherwise specified.
ARF450 UNIT Volts Amps Volts Watts C
450 450 11 30 650 -55 to 200 300
Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1 gfs2 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage
1
MIN
TYP
MAX
UNIT Volts A nA mhos
500 5 25 250 100 3 0.9 3 5.8 1.1
5
(ID(ON) = 5.5A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5.5A) Forward Transconductance Ratio (VDS = 25V, ID = 5.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) Delta Gate Threshold Voltage (VDS = VGS, ID = 50mA)
/
VGS(TH) VGS(TH)
0.1
Volts
THERMAL CHARACTERISTICS
Symbol RJC RCS Characteristic (per package unless otherwise noted) Junction to Case (per section) Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT
050-4910 Rev C 12-2000
0.54 0.1
C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA: EUROPE:
405 S.W. Columbia Street
Bend, Oregon 97702-1035 F-33700 Merignac - France
Phone: (541) 382 - 8028
FAX: (541) 388 -0364
Chemin de Magret
Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS (per section)
Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
(Push-Pull Configuration)
ARF450
Test Conditions VGS = 0V MIN TYP MAX UNIT
980 87 25 5 3.0 15 3
1200 120 40 10 7 25 7
ns pF
VDS = 150V f = 1 MHz
VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6
FUNCTIONAL CHARACTERISTICS
Symbol GPS Characteristic
Test Conditions f = 81.36 MHz VGS = 0V VDD = 150V Pout = 500W
MIN
TYP
MAX
UNIT dB %
Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1
12 70
13 75
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein.
Per each transistor side unless otherwise specified.
30 25 20
GAIN (dB)
Pout = 150W
CAPACITANCE (pf)
Class C VDD = 150V
3000 Ciss
1000 500
15 10 5 0 30
Coss 100 50
Crss
60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency
45
1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
10
16
ID, DRAIN CURRENT (AMPERES)
TJ = -55C
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
50
OPERATION HERE LIMITED BY RDS (ON)
100us
12
10 5
1ms
8
10ms 1 0.5 TC =+25C TJ =+200C SINGLE PULSE 100ms
050-4910 Rev C 12-2000
4
TJ = +125C
TJ = -55C
TJ = +25C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics
0.1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area
1.2
VGS(th), THRESHOLD VOLTAGE (NORMALIZED)
ARF450
ID, DRAIN CURRENT (AMPERES)
25
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature
20
VGS=8, 10 & 15V
6.5V 6V
15
10
5.5V 5V 4.5V
5
0
1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics
VGS = 0 VDD = 150V
POUT, POWER OUT (WATTS)
450
f = 81.36 MHz Push-Pull
GPS, COMMON SOURCE AMPLIFIER GAIN (dB)
600
14
12
VGS = 0 VDD = 150V f = 81.36 MHz Push-Pull
300
10
150
8
0
0
12 18 24 30 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In
6
150 300 450 600 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out
6 0
0.6
, THERMAL IMPEDANCE (C/W)
D=0.5 0.1 .05 0.2 0.1 0.05 Note:
PDM
.01 .005
0.02 0.01 SINGLE PULSE
t1 t2
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
JC
.001 10-5
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-4
10
Table 1 - Typical Class C Large Signal Input-Output Impedance (per section) Freq. (MHz) 2.0 13.5 27.0 40.0 65.0 80.0 100.0 Z in () 23.00 - j 7.0 4.30 - j 9.1 1.00 - j 4.2 0.42 - j 1.7 0.35 + j 1.1 0.56 + j 2.5 0.90 + j 3.8 Z OL () 93.0 - j 10 63.0 - j 43 32.0 - j 43 17.5 - j 34 7.7 - j 22 5.1 - j 16 3.4 - j 12
Z in - gate shunted by 25 Z OL - conjugate of optimum load impedance for 150W at 150V
050-4910 Rev C 12-2000
L5 L3 R1 100 J1 T1 C5 C6 C7
+ 150V -
ARF450
C1 75-380 pF ARCO 465 C2 25-115 pF ARCO 462 C3 -C5 2 nF NPO 500V chip C6 10 nF 500V chip C7 .47 uF Ceramic 500V L1-L2 50 nH 3t # 14 ga .3" dia L3-L4 .68 uH 12t #24 enam L5 2t #20 on bead approx 2 uH R1-R2 100 ohm 1 W T1 9:1 RF transformer T2 1:1 coax balun TL1-TL2 Printed line 1" long
TL1
L1
C3 J2
C1 TL2 L2 R2 100 DUT L4
C2
T2
C4
81.36 MHz Test Circuit
R1 6.8K + Bias 0-6V R4 10K + C1 1 C2 10n C3 .47 L3 + 80 V T1 9:1 RF Transformer on type 43 beads T2 4:1 RF Transformer. Made from two pieces of 25 ohm semi-rigid coax with type 43 ferrite bead loading. J2
T1 J1 R8 20 10W
DUT
C6 50p
C4 .1 T2
C5 1n
30 MHz Linear Test Circuit
.875
.176
Typical Mounting
1
HAZARDOUS MATERIAL WARNING
ARF450
BeO 11405
.375
1
ARF450
.582
BeO
11405
6 5,8 7
.062 .375
8
.005 .125 .210 .060 typ. .210 .125
dims: inches
Thermal Considerations and Package Mounting:
The rated 650W power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 200C. The thermal resistance between junctions and case mounting surface is 0.27 C/W. When installed, an additional thermal impedance of 0.05 C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint com-
yyyy ;;;; yy ;;
3 1,4
8
2
Clamp
ARF 450
Compliant layer
Heat Sink
The ceramic portion of the device between leads and mounting surface is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste.
pound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. An L-clamp, a compliant layer of plastic or rubber, and a 6-32 (M3.5) screw can provide the minimum 35 lb required mounting force. T = 4 in-lb.
050-4910 Rev C 12-2000
USA: EUROPE:
405 S.W. Columbia Street
Bend, Oregon 97702-1035 F-33700 Merignac - France
Phone: (541) 382 - 8028
FAX: (541) 388 -0364
Chemin de Magret
Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61

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